Semiconductor device with sidewall interconnection structure and method for manufacturing the same, and electronic apparatus

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United States of America

PATENT NO 11961787
APP PUB NO 20220189853A1
SERIAL NO

17545676

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Abstract

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A semiconductor device with a sidewall interconnection structure and a method for manufacturing the same, and an electronic apparatus including the semiconductor device are provided. According to embodiments, the semiconductor device includes: a vertical stack including a plurality of element layers, wherein each element layer of the plurality of element layers includes a plurality of semiconductor elements and a metallization layer for the plurality of semiconductor elements; and an interconnection structure laterally adjoined the vertical stack. The interconnection structure includes: an electrical isolation layer; and a conductive structure in the electrical isolation layer, wherein at least a part of a conductive structure in the metallization layer of the each element layer is in contact with and electrically connected to the conductive structure at a corresponding height in the interconnection structure in a lateral direction.

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Patent Owner(s)

  • INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhu, Huilong Poughkeepsie, US 690 12414

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