Trench gate device and method for making the same
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United States of America Patent
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Dec 13, 2022
Grant Date -
N/A
app pub date -
Mar 30, 2021
filing date -
Jul 16, 2020
priority date (Note) -
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Abstract
A method for manufacturing a trench gate device includes: forming a trench in a substrate with a super junction structure; forming a gate dielectric layer in the trench; forming a polysilicon gate by filling a portion of the trench with polysilicon; forming an intermediate dielectric layer in the trench; forming an auxiliary polysilicon layer by filling a gap in the trench with polysilicon; forming a source region of the trench gate device in the substrate; depositing an interlayer dielectric layer, and forming contacts in the interlayer dielectric layer, wherein the polysilicon gate, the auxiliary polysilicon layer, and the source region are led out from the contacts; and connecting the led-out auxiliary polysilicon layer to the led-out source region.
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