MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
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United States of America Patent
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Aug 24, 2010
Grant Date -
Dec 6, 2007
app pub date -
Jun 6, 2006
filing date -
Jun 6, 2006
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Abstract
A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.
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