Semiconductor memory device with optimum refresh cycle according to temperature variation

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United States of America Patent

PATENT NO 8520450
APP PUB NO 20110286287A1
SERIAL NO

13196779

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Abstract

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Methods for generating a refresh signal in a semiconductor device and methods for performing a refresh operation in a semiconductor memory device are disclosed. A method for generating a refresh signal includes measuring a temperature of the semiconductor memory device, generating a temperature controlled voltage based on the measured temperature, generating an N-bit digital signal based on the temperature controlled voltage, and generating a refresh signal whose frequency is determined by the N-bit digital signal. The generation of the temperature controlled voltage includes generating a first current that is increased when the measured temperature is decreased and is decreased with the measured temperature is increased, and generating the temperature controlled voltage.

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Sang-Hoon Ichon-shi, KR 26 340
Kim, Se-Jun Ichon-shi, KR 40 495
Ko, Jae-Bum Ichon-shi, KR 33 323

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