Composition for etching and method for manufacturing semiconductor device using same

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United States of America Patent

PATENT NO 11530355
APP PUB NO 20210054283A1
SERIAL NO

17093654

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A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Jin Uk Daejeon, KR 89 351
Lim, Jung Hun Daejeon, KR 36 96
Park, Jae Wan Daegu, KR 67 444

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