Semiconductor structure and method for manufacturing the same
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United States of America Patent
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Nov 2, 2010
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N/A
app pub date -
May 17, 2010
filing date -
Jul 4, 2008
priority date (Note) -
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Abstract
A semiconductor structure and a method for manufacturing the same are provided. Compared to conventional structures of thin film transistors, the structure of the present invention uses a patterned first metal layer as a data line, and a patterned second metal layer as a gate line. In a thin film transistor, a gate is also located in the patterned first metal layer, and is electrically connected to the gate line located in the patterned second metal layer through a contact hole. A source and a drain of the thin film transistor are electrically connected to the data line through a contact hole. The structure of the present invention increases a storage capacitance and an aperture ratio.
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