Transistor manufacturing method

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United States of America

PATENT NO 11915978
SERIAL NO

17291668

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Abstract

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A first regrowth layer and a second regrowth layer comprising GaAs having high resistance are regrown on a surface of an etching stop layer exposed to the bottom of a first groove and a second groove, and then n-type InGaAs is regrown on the first regrowth layer and the second regrowth layer, whereby a source region and a drain region configured to make contact with a channel layer are formed in the first groove and the second groove respectively.

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Patent Owner(s)

  • NIPPON TELEGRAPH AND TELEPHONE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoshi, Takuya Tokyo, JP 10 6
Matsuzaki, Hideaki Tokyo, JP 29 74
Sugiyama, Hiroki Tokyo, JP 91 609
Yoshiya, Yuki Tokyo, JP 6 1

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