Vertical transistor with air gap spacers

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United States of America Patent

PATENT NO 9443982
SERIAL NO

15018066

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Abstract

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A semiconductor structure containing a vertical transistor having air gap spacers located above and below each functional gate structure is provided. Notably, a bottom air gap spacer is located between a bottommost surface of first and second functional gate structures and a topmost surface of a bottom source/drain region, and a top air gap spacer is located between a topmost surface of the first and second functional gate structures and a surface of the top source/drain region.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balakrishnan, Karthik White Plains, US 335 2045
Cheng, Kangguo Schenectady, US 3075 29875
Hashemi, Pouya White Plains, US 600 4505
Reznicek, Alexander Troy, US 1413 11253

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