Polycrystalline silicon and process and apparatus for producing the same
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United States of America Patent
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Mar 1, 2005
Grant Date -
Aug 8, 2002
app pub date -
Jan 11, 2002
filing date -
May 11, 2000
priority date (Note) -
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Abstract
Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm.sup.3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed polycrystalline silicon. There is further provided a polycrystalline silicon production apparatus in which the deposition and melting of silicon are carried out on the inner surface of a cylindrical vessel, a chlorosilane feed pipe is inserted into the cylindrical vessel to a silicon molten liquid, and seal gas is supplied into a space between the cylindrical vessel and the chlorosilane feed pipe.
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