High voltage avalanche diode for active clamp drivers

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11984475
APP PUB NO 20230170384A1
SERIAL NO

17536391

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Abstract

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An integrated circuit includes a shallow P-type well (SPW) below a surface of a semiconductor substrate and a shallow N-type well (SNW) below the surface. The SPW forms an anode of a diode and the SNW forms a cathode of the diode. The SNW is spaced apart from the SPW by a well space region; and a thin field relief oxide structure lies over the well space region.

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Patent Owner(s)

  • TEXAS INSTRUMENTS INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Edwards, Henry Litzmann Garland, US 110 450
Khayat, Joseph Maurice Bedford, US 21 227
Venugopal, Archana Mountain View, US 53 102

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