Semiconductor device and production method therefor
Number of patents in Portfolio can not be more than 2000
United States of America
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Dec 21, 2021
Grant Date -
Jun 10, 2021
app pub date -
Feb 1, 2018
filing date -
Feb 1, 2018
priority date (Note) -
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status (Latency Note)
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Abstract
Because of inclusion of: a source electrode that is formed on a front surface of a semiconductor substrate and that is joined to the semiconductor substrate both at a source electrode as a first contact region that is an ohmic contact region and at a source electrode as a second contact region that is a contact region with a non-ohmic contact or the like; a back-surface electrode formed on a back surface of the semiconductor substrate; and a through hole in which an interconnection is provided that connects the source electrode as the second contact region in the source electrode with the back-surface electrode; it is possible not only to improve the corrosion resistance but also to reduce the leakage current, so that a highly-reliable semiconductor device suited for high frequency operation is provided.
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