Method of fabricating a semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11929105
SERIAL NO

17504005

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present application makes public a magnetic memory and a reading/writing method thereof, which magnetic memory comprises at least one cell layer, and the cell layer includes a plurality of parallel second wires that are disposed in a second plane, the first plane being parallel to the second plane, and projections of the second wires onto the first plane intercrossing the first wires; a plurality of storage elements that are disposed between the first plane and the second plane, the storage elements including magnetic tunnel junctions and bi-directional gating components connected in series along a direction perpendicular to the first plane, the magnetic tunnel junctions being connected to the first wires, the bi-directional gating components being connected to the second wires, and the bi-directional gating components being configured to be conductive upon application of a threshold voltage and/or a threshold current.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Xiaoguang Hefei, CN 88 355
Wu, Baolei Hefei, CN 10 4
Wu, Yulei Hefei, CN 15 3

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