Method of fabricating semiconductor device
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United States of America Patent
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-
Aug 14, 2007
Grant Date -
Jun 30, 2005
app pub date -
Dec 29, 2004
filing date -
Dec 30, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a Cu line and method of forming the same, by which reliability (e.g., EM, BTS and the like) can be enhanced by replacing SiN by HfO.sub.x, which plays a role as a protective layer and/or an etch stop layer on a Cu line, prevents or inhibits galvanic corrosion due to Cu oxide, and inhibits or reduces additional formation of Cu oxide by gathering or scavenging oxygen atoms from --OH, O.sub.2, and H.sub.2O. The present method includes the steps of forming a trench in an insulating layer on a substrate, forming a planarized Cu layer in the trench, forming a HfO.sub.x layer on the planarized Cu layer, and thermally treating the substrate.
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