Methods of forming non-volatile memory
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United States of America Patent
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Feb 12, 2013
Grant Date -
Mar 10, 2011
app pub date -
Nov 18, 2010
filing date -
Jul 10, 2008
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Abstract
Methods of forming non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.
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