Oxide etching method and structures resulting from same
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United States of America Patent
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-
Mar 11, 2003
Grant Date -
Nov 8, 2001
app pub date -
May 23, 2001
filing date -
Sep 2, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
An etching method includes providing a first insulating material layer on a substrate assembly surface and a second insulating material layer on the first insulating material layer. The first insulating material layer has an etch rate that is greater than the etch rate of the second insulating material layer when exposed to an etch composition. Portions of the first insulating material layer and the second insulating material layer are removed using at least the etch composition. Various types of structures (e.g., contacts, capacitors) are formed with use of the method.
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