Wiring substrate and method of manufacturing thereof, and thin film transistor and method of manufacturing thereof
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United States of America Patent
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May 13, 2008
Grant Date -
Apr 7, 2005
app pub date -
Sep 30, 2004
filing date -
Oct 2, 2003
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.
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