Process for producing integrated circuits including reduction using gaseous organic compounds
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United States of America Patent
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Jul 10, 2007
Grant Date -
Sep 29, 2005
app pub date -
Apr 19, 2005
filing date -
May 15, 2000
priority date (Note) -
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Abstract
This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional groups for the reduction of a metal oxide layer formed during the production of an integrated circuit. According to the present process the metal oxide layer is at least partly reduced to elemental metal with a reducing agent selected from organic compounds containing one or more of the following functional groups: alcohol (--OH), aldehyde (--CHO), and carboxylic acid (--COOH).
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