Growing method of SiC single crystal
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United States of America Patent
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Aug 3, 2010
Grant Date -
Mar 29, 2007
app pub date -
Sep 28, 2006
filing date -
Sep 29, 2005
priority date (Note) -
Expired
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Abstract
A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.
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