Importance

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Abstract

Structures and processes are disclosed for reducing electrical contact resistance between two metal layers. Specifically, a resistive aluminum oxide layer forms spontaneously on metal lines including aluminum, within a V-shaped contact via which is opened in an insulating layer through a mask. The mask includes an opening with a width of less than about 0.75 .mu.m. After removing the mask, the via is treated with an RF etch. The resultant contact has a width at the bottom of less than 0.9 .mu.m. A titanium layer of 300 .ANG. to 400 .ANG. is deposited into the via, with about 60 .ANG. to 300 .ANG. reaching the via bottom and reacted with the underlying aluminum. The reaction produces a titanium-aluminum complex (TiAl.sub.x) with a thickness of about 150 .ANG. to 900 .ANG.. Advantageously, this composite layer provides a low resistivity contact between the aluminum-containing layer and a subsequently deposited metal layer.

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First Claim