Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
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United States of America Patent
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Mar 23, 2010
Grant Date -
Jun 19, 2008
app pub date -
Mar 17, 2005
filing date -
Mar 25, 2004
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Abstract
An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
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