Method for fabricating capacitor using electrochemical deposition and wet etching
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United States of America Patent
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-
Mar 2, 2004
Grant Date -
Oct 30, 2003
app pub date -
Dec 30, 2002
filing date -
Apr 26, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Provided is a method for fabricating a capacitor using an electrochemical deposition method and Ce(NH.sub.4).sub.2 (NO.sub.3).sub.6 solution. The method includes the steps of: a) forming a contact hole in an insulation layer on a substrate; b) forming a plug including nitride in the contact hole; c) forming a Ru seed layer in the contact hole and on the insulation layer; d) forming a sacrificial layer including an open area overlapped with the contact hole on the Ru seed layer; e) forming a Ru layer for an electrode of the capacitor in the open area by performing electrochemical deposition; f) removing the sacrificial layer, whereby the Ru seed layer not covered with the Ru layer is exposed; and g) etching the exposed Ru seed layer by using an aqueous solution including Ce(NH.sub.4).sub.2 (NO.sub.3).sub.6.
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