Semiconductor device being capable of improving the packing density with a high heat radiation characteristics
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United States of America Patent
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Oct 20, 1992
Issued Date -
N/A
app pub date -
Jun 8, 1990
filing date -
Apr 28, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A silicon substrate having a thin film circuit layer formed on the surface of the substrate is laid on a metallic base and a semiconductor chip made of compound semiconductor such as gallium arsenide is disposed in a hole defined in the central portion of the silicon substrate so that the semiconductor chip can be directly fixed to the metallic base for dissipating the heat of the semiconductor chip. The connecting terminals of the semiconductor chip are connected to thin film circuit layer formed on the surface of the silicon substrate through wires. The heat generated in the semiconductor chip can be transmitted to the metallic base so that the heat is effectively dissipated.
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