Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
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United States of America Patent
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Sep 18, 2007
Grant Date -
Nov 11, 2004
app pub date -
Jun 7, 2004
filing date -
Oct 12, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a compound of the formula --(SiH.sub.2NH).sub.n-- wherein n represents a positive integer, a weight average molecular weight within the range of about 3,300 to 3,700 to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
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