Low-fluence irradiation for lateral crystallization enabled by a heating source
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United States of America Patent
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Jun 6, 2006
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app pub date -
Feb 18, 2005
filing date -
Nov 13, 2003
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Abstract
A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.
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