LDMOS transistors and methods for making the same
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United States of America Patent
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May 31, 2005
Grant Date -
Dec 16, 2004
app pub date -
Jun 13, 2003
filing date -
Jun 13, 2003
priority date (Note) -
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Abstract
LDMOS transistor devices and fabrication methods are provided, in which additional dopants are provided to region of a substrate near a thick dielectric between the channel and the drain to reduce device resistance without significantly impacting breakdown voltage. The extra dopants are added by implantation prior to formation of the thick dielectric, such as before oxidizing silicon in a LOCOS process or following trench formation and before filling the trench in an STI process.
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