Circuit and method for reducing memory idle cycles

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6570816
APP PUB NO 20030035339A1
SERIAL NO

10274773

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Abstract

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An N-bit wide synchronous, burst-oriented Static Random Access Memory (SRAM) reads out a full N bits simultaneously from its array in accordance with an address A0 into N latched sense amplifiers, which then sequentially output N/X bit words in X burst cycles. Because the SRAM's array reads out the full N bits simultaneously, the array's address bus is freed up to latch in the next sequential address A1 so data output continues uninterrupted, in contrast to certain conventional SRAMs. The SRAM also writes in a full N bits simultaneously after sequentially latching in N/X bit words in X burst cycles into N write drivers. This simultaneous write frees up the array's address bus to begin latching in the next sequential address A1 so data input continues uninterrupted, again in contrast to certain conventional SRAMs.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pawlowski, Joseph T Boise, ID 40 312
Wilford, John R Meridian, ID 22 475

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