Evaluation of memory cell characteristics
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United States of America Patent
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Aug 28, 2001
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N/A
app pub date -
Dec 14, 1999
filing date -
Aug 16, 1996
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Abstract
Techniques are used to evaluate margin of programmable memory cells. In particular, techniques are used to measure negative erased threshold voltage levels. Techniques are used to increase the longevity and reliability of memory cells by adjusting a window of memory cell operation
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