Semiconductor having a high aspect ratio via

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9099476
APP PUB NO 20140054779A1
SERIAL NO

14073714

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Lan-Lin Sindian, TW 87 1860
Chu, Li-Cheng Taipei, TW 19 105
Hsieh, Yuan-Chih Hsinchu, TW 100 990
Liu, Ping-Yin Yonghe, TW 106 1710
Tsai, Chia-Shiung Hsin-Chu, TW 505 6277
Wu, Ming-Tung Hsinchu, TW 20 349

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