Method of controlling film thinning of semiconductor wafer for solid-state image sensing device
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United States of America Patent
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Jun 14, 2011
Grant Date -
Jun 9, 2011
app pub date -
Aug 27, 2010
filing date -
Aug 31, 2009
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Abstract
The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes.
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