Low temperature deposition of barrier layers
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United States of America Patent
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Mar 20, 2001
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N/A
app pub date -
Sep 3, 1998
filing date -
Sep 3, 1998
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Abstract
The present invention provides a method for forming a barrier layer, preferably a conductive barrier layer. According to the present invention, a barrier layer is formed from an organometallic precursor in the presence of an oxidant in a low temperature deposition technique using a platinum containing precursor. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
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