Method for maintaining the cleanness of a vacuum chamber of a physical vapor deposition system
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United States of America Patent
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Jul 2, 2002
Grant Date -
Mar 21, 2002
app pub date -
Nov 29, 2000
filing date -
Sep 21, 2000
priority date (Note) -
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Abstract
The invention provides a method using plasma burn-in for maintaining cleanness within a vacuum chamber of a physical vapor deposition system, thereby reducing particles falling upon a processed wafer. When the operation pressure of the plasma for plasma burn-in is elevated above 10 mtorr, the distribution of the plasma is ever changed and able to enter the narrow space between the metal target side surface and an inner wall of the vacuum chamber so as to bombard the nodules on the side surface and to deposit a metal film upon the brittle metal compound film within the vacuum chamber for reducing the number of particles falling upon the wafer.
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