Cu pillar bump with electrolytic metal sidewall protection
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United States of America Patent
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Apr 14, 2015
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app pub date -
Jun 26, 2013
filing date -
Apr 22, 2010
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Abstract
A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer. The method further includes forming a copper layer in the opening of the mask layer and removing a portion of the mask layer to form a space between the copper layer and the mask layer. The method further includes performing an electrolytic process to fill the space with a metal layer and removing the mask layer.
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