Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier

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United States of America Patent

PATENT NO 8050081
APP PUB NO 20090040805A1
SERIAL NO

12108465

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Abstract

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A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Yool-Guk Ichon-shi, KR 3 9
Lee, Jong-Dae Ichon-shi, KR 28 347
Nam, Woo-Sik Ichon-shi, KR 3 7
Oh, Young-Hwan Ichon-shi, KR 7 51
Park, Jea-Gun Ichon-shi, KR 25 226
Seo, Sung-Ho Ichon-shi, KR 10 32
Seung, Hyun-Min Ichon-shi, KR 4 8

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