Method for forming a semiconductor device with an integrated poly-diode
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United States of America Patent
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Jun 21, 2016
Grant Date -
Feb 26, 2015
app pub date -
Oct 2, 2014
filing date -
Aug 30, 2010
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Abstract
A method for forming a field effect power semiconductor device includes providing a semiconductor body comprising a main horizontal surface and a conductive region arranged next to the main horizontal surface, forming an insulating layer on the main horizontal surface, and etching a narrow trench through the insulating layer so that a portion of the conductive region is exposed, the narrow trench comprising, in a given vertical cross-section, a maximum horizontal extension. The method further includes forming a vertical poly-diode structure comprising a horizontally extending pn-junction. Forming the vertical poly-diode structure includes depositing a polycrystalline semiconductor layer comprising a minimum vertical thickness of at least half of the maximum horizontal extension and maskless back-etching of the polycrystalline semiconductor layer to form a polycrystalline region in the narrow trench.
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