Trench Schottky rectifier device and method for manufacturing the same
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United States of America Patent
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Dec 31, 2013
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app pub date -
Oct 12, 2010
filing date -
Oct 12, 2009
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Abstract
A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.
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