Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same
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United States of America Patent
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Nov 7, 2023
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N/A
app pub date -
Oct 7, 2021
filing date -
Jun 7, 2017
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Abstract
According to an embodiment, a phase-change memory device comprises: an upper electrode and a lower electrode; a phase-change layer in which a crystal state thereof is changed by heat supplied by the upper electrode and the lower electrode; and a selector which selectively switches the heat supplied by the upper electrode and the lower electrode to the phase-change layer, wherein the selector is formed of a compound which includes a transition metal in the phase-change material so as to have a high resistance when the crystalline state of the selector is crystalline and so as to have a low resistance when the crystalline state of the selector is non-crystalline.
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