Semiconductor device with recessed gate and shield electrode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 5, 2009
Grant Date -
Jun 14, 2007
app pub date -
Jun 2, 2006
filing date -
Dec 8, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device includes a substrate having a recess, a gate electrode in the recess in the substrate, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. An insulating film is on at least on a surface of the gate electrode and a portion in the recess, other than where the gate electrode is located, and a shield electrode connected to the source electrode is located on a portion of the insulating film between the gate electrode and the drain electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully