Method for estimating yield of integrated circuit device

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United States of America Patent

PATENT NO 6311139
SERIAL NO

09061088

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The necessary information such as chip area A, number of elements, and defect density D is inputted to calculate element density TD and mean element density TDM. The inverse operation chip area A' is calculated from the estimation equation: Y=f(A) such as Stapper's equation showing the dependence of the yield on the defect density D and chip area A. Next, for various kinds of integrated circuit devices in a diffusion process, the functional relation g (TD/TDM) which is considered to be most correct is determined from the data of the relationship between the ratio (A'/A) and the ratio (TD/TDM), and from the relational expression g (TD/TDM), the correction factor K is calculated. Finally, the values of the correction factor K and the chip area A are substituted into Y=f(A.times.K) to calculate the expected yield Y.

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Patent Owner(s)

  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishida, Hideki Toyama, JP 76 774
Kuroda, Takao Kyoto, JP 70 1048

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