Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11437509
APP PUB NO 20210359128A1
SERIAL NO

17217620

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A main semiconductor device element is a vertical MOSFET with a trench gate structure, containing silicon carbide as a semiconductor material, and having first and second p+-type regions that mitigate electric field applied to bottoms of trenches. The first p+-type regions are provided separate from the p-type base regions and face the bottoms of the trenches in a depth direction. The first p+-type regions are disposed at an interval that is at most 1.0 μm, in a first direction that is a direction in which gate electrodes extend. The second p+-type regions are provided between adjacent trenches of the trenches, separate from the first p+-type regions and the trenches, and in contact with the p-type base regions. In the first direction that is the direction in which the trenches, the second p+-type regions extend in a linear shape having a length that is substantially equal to that of the trenches.

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Patent Owner(s)

  • FUJI ELECTRIC CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoshi, Yasuyuki Matsumoto, JP 73 192

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