Semiconductor device
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United States of America Patent
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Jan 20, 2009
Grant Date -
Jun 8, 2006
app pub date -
Dec 5, 2005
filing date -
Dec 6, 2004
priority date (Note) -
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Abstract
A semiconductor device comprises an active layer formed on a substrate, a superlattice layer formed on the active layer, and an ohmic electrode formed on the superlattice layer. In the superlattice layer, a first thin film and a second thin film are alternately laminated. The second thin film is made of a semiconductor which has polarization characteristics different from those of the first thin film and a band gap larger than that of the first thin film. An interface region between an upper surface of the first thin film and a lower surface of the second thin film or an interface region between a lower surface of the first thin film and an upper surface of the second thin film, is doped with an impurity.
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