Etchant and etching process for substrate of a semiconductor device

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United States of America Patent

PATENT NO 10353147
APP PUB NO 20170045685A1
SERIAL NO

15339446

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Abstract

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A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Tien-I Taoyuan, TW 276 4659
Chen, Hai-Ching Hsin-Chu, TW 193 829
Kuo, Ying-Hao Hsin-Chu, TW 88 648
Lee, Wan-Yu Taipei, TW 38 266

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