Manufacturing method of a semiconductor device using a protect layer along a top sidewall of a trench to widen the bottom of the trench

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United States of America Patent

PATENT NO 11805640
APP PUB NO 20230217650A1
SERIAL NO

17647346

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Abstract

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A semiconductor device includes a substrate, a passing word line in the substrate, and a dielectric structure surrounding the passing word line. The dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Chung-Lin Taoyuan, TW 102 304

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