MIS semiconductor device with sloped gate, source, and drain regions
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United States of America Patent
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Jul 9, 2002
Issued Date -
N/A
app pub date -
Aug 18, 2000
filing date -
Jan 18, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.
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