Dual-sided microstructured, position-sensitive detector
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United States of America Patent
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Jul 10, 2007
Grant Date -
Sep 16, 2004
app pub date -
Jun 5, 2002
filing date -
Jun 15, 2001
priority date (Note) -
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Abstract
The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20 500 .mu.m wide. Said detectors are produced by diffusing ions on the side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallized thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.
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