Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer
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United States of America Patent
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Nov 15, 2011
Grant Date -
Mar 19, 2009
app pub date -
Sep 11, 2008
filing date -
Sep 14, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
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