Triple-layered ceramic heater

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United States of America Patent

PATENT NO 5350720
SERIAL NO

08045934

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Abstract

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An improved double-layered ceramic heater, which is used for heating a semiconductor silicon wafer mounted thereon in the processing of semiconductor devices, is proposed to be freed from the problems in the prior art ceramic heaters in respects of service life and contamination of silicon wafers mounted thereon. Different from conventional ceramic heaters having a ceramic substrate plate of, for example, boron nitride provided with a heater element layer of a metal foil, the inventive ceramic heater has a substrate plate of silicon nitride and a heater element layer of graphite is formed thereon by the CVD method so that the ceramic heater is not responsible for contamination of semiconductor silicon by virtue of absence of any element which can be a disturbing dopant of the semiconductor. The problem of contamination with carbon can be solved by further providing a coating layer of silicon nitride by the CVD method.

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Patent Owner(s)

  • SHIN-ETSU CHEMICAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harada, Kesazi Gunma, JP 2 16
Itou, Kenji Gunma, JP 28 265
Kawada, Nobuo Gunma, JP 26 607
Kubota, Yoshihiro Gunma, JP 168 1702

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