Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
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United States of America Patent
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Sep 27, 2005
Grant Date -
Sep 4, 2003
app pub date -
Dec 3, 2002
filing date -
Dec 5, 2001
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Abstract
A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
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