Method for forming a conductive layer of material on an integrated circuit substrate
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United States of America Patent
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-
Sep 17, 1996
Grant Date -
N/A
app pub date -
Dec 18, 1995
filing date -
Dec 18, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In one embodiment a plasma ignitor (10) having a first dielectric housing (18), that encases a first portion of a first conductive lead (14) and a first portion of a second conductive lead (16), and end cap (30), that locks its filament (31) into position, is used to initiate a plasma within an etch chamber (64). The plasma is used to etch an integrated circuit substrate (62) and to form an etched surface (78). A conductive layer of material (80) is then deposited on the etched surface (78). The first dielectric housing (18) keeps the first portion of the first conductive lead (14) and the first portion of the second conductive lead (16) from shorting to one another during processing, and the end cap (30) prevents the filament (31) from falling off during processing. Thus, the present invention allows contact resistance to be repeatably minimized.
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