Exchange coupling film and electroresistive sensor using the same
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United States of America Patent
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Jan 13, 2004
Grant Date -
Dec 20, 2001
app pub date -
Apr 11, 2001
filing date -
Apr 12, 2000
priority date (Note) -
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Abstract
An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals with (111) planes substantially aligned. The seed layer is preferably non-magnetic. A laminate structure including the antiferromagnetic layer and a free layer inclusive of the intervening layers have crystalline orientations with their (111) planes substantially aligned, so that large crystal grains and, hence, large ratio of resistance variation can be achieved.
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