Semiconductor device
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United States of America Patent
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Sep 6, 2011
Grant Date -
Aug 6, 2009
app pub date -
Jan 28, 2009
filing date -
Jan 31, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device has a semiconductor substrate of a first conductivity type; first to third high-voltage insulated-gate field effect transistors formed on a principal surface of the semiconductor substrate; a first device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the second high-voltage insulated-gate field effect transistor from each other; a second device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the third high-voltage insulated-gate field effect transistor from each other; a first impurity diffusion layer of the first conductivity type that is formed below the first device isolation insulating film; and a second impurity diffusion layer of the first conductivity type that is formed below the second device isolation insulating film.
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